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| RB495D 40V, 350mA, SMD Schottky Diode Small Signal Diode SOT23 A F Features Low VF, Low IR, High Reliability Schottky Diode Surface device type mounting Moisture sensitivity level 1 Matte Tin(Sn) lead finish with Nickel(Ni) underplate Pb free version and RoHS compliant Green compound (Halogen free) with suffix "G" on packing code and prefix "G" on date code B E C D G Dimensions A Unit (mm) Min 2.65 1.19 0.37 1.78 2.10 0.89 0.45 Max 3.05 1.40 0.51 2.05 2.50 0.11 Unit (inch) Min Max 0.104 0.120 0.047 0.055 0.015 0.020 0.070 0.080 0.083 0.098 0.035 0.043 Mechanical Data Case :SOT-23 small outline plastic package Terminal: Matte tin plated, lead free., solderable per MIL-STD-202, Method 208 guaranteed High temperature soldering guaranteed: 260C/10s Weight :0.008 gram (approximately) B C D E F G 0.61 0.018 0.024 Ordering Information Part No. RB495D RF Package SOT23 Packing 3Kpcs/7" Reel 1 Anode 2 Cathode 3 Anode/Cathode Electrical Symbol Maximum Ratings and Electrical Characteristics Rating at 25C ambient temperature unless otherwise specified. Maximum Ratings Type Number Power Dissipation Repetitive Peak Reverse Voltage Reverse Voltage Mean Forward Current Non-Repetitive Peak Forward Surge Current (Note 1) Junction and Storage Temperature Range Symbol PD VRRM VR IO IFSM TJ, TSTG Value 200 40 25 350 1.5 -40 to + 125 Units mW V V mA A C Electrical Characteristics Type Number Reverse Breakdown Voltage Forward Voltage Reverse Leakage Current Junction Capacitance IR= IF= IF= VR= 100A 10mA 200mA 25V Symbol V(BR) VF IR CJ Min 40 Max 0.3 0.5 70 50 Units V V A pF VR=0, f=1.0MHz Notes:1. 8.3ms singlehalf Sine-wave Version : A09 RB495D 40V,350mA,SMD Schottky Diode Small Signal Diode Rating and Sharacteristic Curves FIG 1 Typical Forward Characteristics Instantaneous Forward Current (mA) 1000 100 10 10000 FIG 2 Reverse Current vs Reverse Voltage Reverse Current (uA) 1000 Ta=25C Ta=25C 1 0.1 100 10 0.01 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1 0 10 20 30 40 50 60 Instantaneous Forward Volatge (V) FIG 3 Admissible Power Dissipation Curve 250 100 Reverse Volatge (V) FIG 4 Typical Junction Capacitance Junction Capacitance (pF) 0 25 50 75 100 125 150 Power Dissipation (mW) 200 150 100 50 0 80 60 40 20 0 0 5 10 15 20 25 30 Ambient Temperature (C) Reverse Voltage (V) Version : A09 |
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